All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits
نویسندگان
چکیده
J. Renteria, R. Samnakay, C. Jiang, T. R. Pope, P. Goli, Z. Yan, D. Wickramaratne, T. T. Salguero, A. G. Khitun, R. K. Lake, and A. A. Balandin Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521, USA Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521, USA Department of Chemistry, University of Georgia, Athens, Georgia 30602, USA Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521, USA
منابع مشابه
Optical properties of the quasi-two-dimensional dichalcogenides 2H-TaSe2 and 2H-NbSe2
We present a comprehensive analysis of the optical constants of the two-dimensional dichalcogenide materials 2H-TaSe2 and 2H-NbSe2, in an attempt to address the physics of two-dimensional correlated systems. The title compounds were studied over several decades in frequency, from the far-infrared to the ultraviolet. Measurements with linearly polarized light have allowed us to obtain both the i...
متن کاملSuperconducting order from disorder in 2H-TaSe2−xSx
We report on the emergence of robust superconducting order in single crystal alloys of TaSe2−xSx (0≤ ×≤ 2). The critical temperature of the alloy is surprisingly higher than that of the two end compounds TaSe2 and TaS2. The evolution of superconducting critical temperature Tc(x) correlates with the full width at half maximum of the Bragg peaks and with the linear term of the high-temperature re...
متن کاملThreshold voltage and mobility mismatch compensated analogue buffer for driver-integrated poly-Si TFT LCDs - Electronics Letters
An analogue buffer for driver-integrated poly-Si TFT LCDs is described where large mismatches of poly-Si TFT in threshold voltage and mobility are compensated. The buffer has a very simple configuration consisting of an nMOS, a pMOS, three switches, and a capacitor. Because of its simple and compact architecture, the panel size can be kept small even with integrated driver circuits. The measure...
متن کاملFully printed separated carbon nanotube thin film transistor circuits and its application in organic light emitting diode control.
The advantages of printed electronics and semiconducting single-walled carbon nanotubes (SWCNTs) are combined for the first time for display electronics. Conductive silver ink and 98% semiconductive SWCNT solutions are used to print back-gated thin film transistors with high mobility, high on/off ratio, and high current carrying capacity. In addition, with printed polyethylenimine with LiClO4 a...
متن کاملInterplay of charge density wave and multiband superconductivity in 2H-PdxTaSe2.
2H-TaSe2 has been one of unique transition metal dichalcogenides exhibiting several phase transitions due to a delicate balance among competing electronic ground states. An unusual metallic state at high-T is sequentially followed by an incommensurate charge density wave (ICDW) state at ≈122 K and a commensurate charge density wave (CCDW) state at ≈90 K, and superconductivity at TC ~ 0.14 K. Up...
متن کامل